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MCQs

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Leakage current is the term used in the case when p-n junction is:
NETNUST Entry TestPhysicsElectronics
In reverse-biased p-n junction, the reverse current is due to flow of:
NETNUST Entry TestPhysicsElectronics
Forward resistance $(r_{t})$ is the resistance offered by a p-n junction when it is:
NETNUST Entry TestPhysicsElectronics
While drawing a graph between current versus bias voltage (for p-n junction), the current scale is:
NETNUST Entry TestPhysicsElectronics
In the forward biased situation, as the biasing voltage is increased, the current:
NETNUST Entry TestPhysicsElectronics
The external potential difference applied to p-n junction for forward biasing, supplies energy to:
NETNUST Entry TestPhysicsElectronics
In the forward biased situation, the current flowing across the p-n junction is a few:
NETNUST Entry TestPhysicsElectronics
The external potential difference applied to p-n junction in case of forward biased situation must be greater than:
NETNUST Entry TestPhysicsElectronics
In a p-n junction, the current flows due to:
NETNUST Entry TestPhysicsElectronics
A potential barrier of 0.7 V exists across p-n junction made from:
NETNUST Entry TestPhysicsElectronics
The potential barrier across the depletion region in case of silicon and germanium are respectively:
NETNUST Entry TestPhysicsElectronics
Potential barrier across the p-n junction:
NETNUST Entry TestPhysicsElectronics
As a result of diffusion, a region is formed around the p-n function which is a:
NETNUST Entry TestPhysicsElectronics
A potential difference is developed across the depletion region of p-n junction due to:
NETNUST Entry TestPhysicsElectronics
Depletion region contains:
NETNUST Entry TestPhysicsElectronics
Depletion region is the region around the p-n junction and:
NETNUST Entry TestPhysicsElectronics
A hole in p-type may be due to:
NETNUST Entry TestPhysicsElectronics
When phosphorus is added as an impurity in germanium, there is an increase in:
NETNUST Entry TestPhysicsElectronics
The impurity in the germanium is usually in the ratio of:
NETNUST Entry TestPhysicsElectronics
Whenever a covalent bond breaks, it creates:
NETNUST Entry TestPhysicsElectronics
Majority charge carriers in the p-region of p-n junction are:
NETNUST Entry TestPhysicsElectronics
A p-type crystal is:
NETNUST Entry TestPhysicsElectronics
An outer most orbit represents stable configuration if it possesses:
NETNUST Entry TestPhysicsElectronics
All the valence electrons present in a crystal of silicon are bound in their orbits by:
NETNUST Entry TestPhysicsElectronics
Atomic number of germanium atom and number of valence electrons in it are respectively:
NETNUST Entry TestPhysicsElectronics
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