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Leakage current is the term used in the case when p-n junction is:

NETNUST Entry TestPhysicsElectronics

In reverse-biased p-n junction, the reverse current is due to flow of:

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Forward resistance $(r_{t})$ is the resistance offered by a p-n junction when it is:

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While drawing a graph between current versus bias voltage (for p-n junction), the current scale is:

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In the forward biased situation, as the biasing voltage is increased, the current:

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The external potential difference applied to p-n junction for forward biasing, supplies energy to:

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In the forward biased situation, the current flowing across the p-n junction is a few:

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The external potential difference applied to p-n junction in case of forward biased situation must be greater than:

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In a p-n junction, the current flows due to:

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A potential barrier of 0.7 V exists across p-n junction made from:

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The potential barrier across the depletion region in case of silicon and germanium are respectively:

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Potential barrier across the p-n junction:

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As a result of diffusion, a region is formed around the p-n function which is a:

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A potential difference is developed across the depletion region of p-n junction due to:

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Depletion region contains:

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Depletion region is the region around the p-n junction and:

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A hole in p-type may be due to:

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When phosphorus is added as an impurity in germanium, there is an increase in:

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The impurity in the germanium is usually in the ratio of:

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Whenever a covalent bond breaks, it creates:

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Majority charge carriers in the p-region of p-n junction are:

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A p-type crystal is:

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An outer most orbit represents stable configuration if it possesses:

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All the valence electrons present in a crystal of silicon are bound in their orbits by:

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Atomic number of germanium atom and number of valence electrons in it are respectively:

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